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The Designer's Guide Community Forum › Design › High-Power Design › The source region is wider than the drain for powe
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The source region is wider than the drain for powe (Read 2745 times)
dandelion
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The source region is wider than the drain for powe
May 30th, 2007, 2:06am  
Hi,
I found for some MOS Tr at output power stage, the source diffusion region is wider than that of the drain. E.g., I ever saw for a class d power amp output stage, the width of source is ~2.1um while the drain is 1.1um.

Would anyone pls. tell me why?

Thanks
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krishnap
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Re: The source region is wider than the drain for
Reply #1 - May 31st, 2007, 2:47am  
One type of devices used in the power Management blocks is extended drain
devices , in this case Drain will have additional area of diffusion compared to
the source. This terminal can handle high volatge/field  and breakdown limit is more.
In this case source and drain dimensions are not the same.
Could you  verify whether it is this type of device or something else?

Best regards,
Krishna
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