http://www.spectrum.ieee.org/oct07/5553 The above article describes how Intel engineered their latest transistors in 45 nm.
One small point mentioned is that the oxide layer is grown one atomic layer at a time,
and this process is perfectly controllable. Apparently, other foundries working at 45 nm level
have had to do the same.
A potential advantage one sees is the considerable improvement in matching and 1/f noise, if
the oxide growth is so well controlled. Does anyone know about these details or have any comments?
One of course does not expect the lateral dimensions to be as well controlled as the vertical (matching),
but 1/f surely should get better.
Of course, the above improvements do not make analog design at 45 nm much easier.
Vivek