Geoffrey_Coram
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No, Dvt1 is an offset to the threshold voltage of the mos.
For BSIM3/4, you need to have JS and/or JSW specified non-zero for the model card, and these are then multiplied by AD/AS or PD/PS to get the total diode saturation current (JS*AD + JSW*PD). PB is the parameter for the built-in potential. CJ, CJSW, CJSWG are the capacitance parameters (something like CJ*AD, CJSW*(PD-W), CJSWG*W).
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