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Reverse diode voltage (Read 3999 times)
Godfrey
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Reverse diode voltage
Apr 21st, 2008, 1:39pm
 
Is there a parameter for modelling the junction to substrate diode?

So if I take the drain of an nmos transistor below Vss, at some voltage the reverse diode of N diff to substrate should conduct. Same for a PMOS, if I take the drain above Vcc, at some voltage the P diff to N well diode must conduct.
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Geoffrey_Coram
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Re: Reverse diode voltage
Reply #1 - Apr 22nd, 2008, 8:05am
 
Godfrey wrote on Apr 21st, 2008, 1:39pm:
Is there a parameter for modelling the junction to substrate diode?


Generally, yes.

Are you using a BSIM3/4 or PSP model?  Do you have a 4-terminal model?  I've seen some 3-terminal discrete component models that don't have a substrate terminal.  I've also seen some MOS models that don't include the diodes, because they expect you to put them in a subckt that contains the diode.
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Godfrey
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Re: Reverse diode voltage
Reply #2 - Apr 24th, 2008, 2:02pm
 
Its BSIM 3.3 with four terminal devices.

The only parameter I can see which looks about the right value is Dvt1 which also sounds like it might be diode Vt?
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Geoffrey_Coram
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Re: Reverse diode voltage
Reply #3 - Apr 25th, 2008, 5:27am
 
No, Dvt1 is an offset to the threshold voltage of the mos.

For BSIM3/4, you need to have JS and/or JSW specified non-zero for the model card, and these are then multiplied by AD/AS or PD/PS to get the total diode saturation current (JS*AD + JSW*PD).  PB is the parameter for the built-in potential.  CJ, CJSW, CJSWG are the capacitance parameters (something like CJ*AD, CJSW*(PD-W), CJSWG*W).
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