wizardyhnr
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Posts: 3
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hi guys, i am now designing a LNA with specs of 0dBm input P1dB, 18dB power gain, and 1.5dB noise figure of 1710~1980 MHz. I have several questions: 1. Is the LNA's behavior more like PA, 30 parallel bipolars to provide 60mA current. Should i take some simulation like PA to ensure its performance. 2. Is 0dBm input power level possible for SiGe HBTs, tran and pss+pac simulation results show the spec can be met, but i wonder whether the HBT can stand the input power level? 3. Would Darlington Structure show some advantage over simple common-emitter structure, Since at higher frequency, the parasitic inductance connected to bipolar emitter degrade the LNA's power gain dramatically. i do appreciate if someone can help me!!!
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