Hi

I have a sort of doubt does monte-carlo(MC) variation effect is less for

a)  device operating in subthreshold or
-> Effect of vds variation reduces

b)  its vice-versa
-> Effect of Vth (due to MC variation) brings mismatch hence effect is very bad.

One point I was thinking that its also depends on kind of technology we are using. For present technologies sub-90nm nodes "vds" is always a part of current equations and hence there is no perfect strong inversion region, might be MC variation help in that case