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pattern gound shielding (Read 4141 times)
analog_cha
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pattern gound shielding
Mar 24th, 2009, 4:56am
 
I am a novice to this topic.
How do we do pattern ground shielding for an inductor??
I referred some paper which says that the patterns should be done tsuch that they are orthogonal to the spiral, so that it reduces the image currents and hence the ohmic losses.
But in case of an octogan, how can it be done??

If you have any good documents on this, pls share.
Thanks.
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loose-electron
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Re: pattern gound shielding
Reply #1 - Apr 5th, 2009, 4:48pm
 
The isolation shielding of reactive passive elements sparks a lot of debate and opinion. Suggest that you look at putting it together in an EM modeling tool and experiment with the possibilities there. At least then the results are quantitative and not based upon opinions.
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rfmems
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Re: pattern gound shielding
Reply #2 - Apr 16th, 2009, 6:36am
 
Hi Loose-electron,

Do you know if people are still using pattern ground shielding for on-chip inductors? I think it is used quite rarely.

Could you please suggest some reference about the debates? Thanks a lot!

cheers
chenyan
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pancho_hideboo
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Re: pattern gound shielding
Reply #3 - Apr 16th, 2009, 6:41am
 
rfmems wrote on Apr 16th, 2009, 6:36am:
Do you know if people are still using ? I think it is used quite rarely.
If we see chip photos in ISSCC-2009, almost all use pattern ground shielding for on-chip inductors.

I also use pattern ground shielding for on-chip inductors using Cadence VPCD(Virtuoso Passive Component Designer).

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rfmems
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Re: pattern gound shielding
Reply #4 - Apr 16th, 2009, 6:58am
 
pancho_hideboo wrote on Apr 16th, 2009, 6:41am:
If we see chip photos in ISSCC-2009, almost all use pattern ground shielding for on-chip inductors.

I also use pattern ground shielding for on-chip inductors using Cadence VPCD(Virtuoso Passive Component Designer).






Hi pancho_hideboo, which ISSCC paper do you mean. I had a quick glance at the ISSCC2009 DVD pll session, did not find any patterned ground shield.

Anyway since you are still using them in design. Could you please share some experience, how much the quality factor can be improved (at which frequency)? Also if you can, some information of the technology you are using.

Thanks a lot
chenyan
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Re: pattern gound shielding
Reply #5 - Apr 16th, 2009, 7:13am
 
rfmems wrote on Apr 16th, 2009, 6:58am:
Hi pancho_hideboo, which ISSCC paper do you mean. I had a quick glance at the ISSCC2009 DVD pll session, did not find any patterned ground shield.
Wireless and RF building blocks.

rfmems wrote on Apr 16th, 2009, 6:58am:
Anyway since you are still using them in design. Could you please share some experience, how much the quality factor can be improved (at which frequency)? Also if you can, some information of the technology you are using.

150nm and 130nm CMOS Process which have five metals and one thick metal.
These are not major foundry processes.

Quality factor is little improved as simulation.
Actual measurements also show little improvement in phase noise but it is not drastical improvement.
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Re: pattern gound shielding
Reply #6 - Apr 16th, 2009, 8:12am
 
Hi pancho_hideboo,

Thanks. I think for blocks like lna, it is important to isolate the interferes from substrate, that is why PGS is more ofen used.

For VCO design, as the Q is not obviously improved, it is really used in rare cases. Of course isolate the interferers from substrate is also important for VCO. However, this can be handled with much easier solutions.
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pancho_hideboo
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Re: pattern gound shielding
Reply #7 - Apr 16th, 2009, 8:23am
 
rfmems wrote on Apr 16th, 2009, 8:12am:
I think for blocks like lna, it is important to isolate the interferes from substrate, that is why PGS is more ofen used.

For VCO design, as the Q is not obviously improved, it is really used in rare cases. Of course isolate the interferers from substrate is also important for VCO. However, this can be handled with much easier solutions.

My opinios are:
- PGS don't result in any bad effects at least.
- So it is not valueless to use PGS even for VCO design.
- Many major foundary PDK provide PGS for inductor.
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Terence
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Re: pattern gound shielding
Reply #8 - Apr 17th, 2009, 3:53am
 
There are two side-effects of PGS:

1.) One dedicate clean AC ground pad is required for each inductor
2.) Self-resonance freq is degraded.

Actually, we do not use PGS very often.
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Re: pattern ground shielding
Reply #9 - Apr 17th, 2009, 4:02am
 
Terence wrote on Apr 17th, 2009, 3:53am:
1.) One dedicate clean AC ground pad is required for each inductor
What do you mean ?

Terence wrote on Apr 17th, 2009, 3:53am:
2.) Self-resonance freq is degraded.
I agree to this effect.
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« Last Edit: Apr 18th, 2009, 2:06am by pancho_hideboo »  
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Re: pattern gound shielding
Reply #10 - Apr 17th, 2009, 11:37am
 
I believe they mean that if you really need the PGS to improve inductor to substrate isolation, then you need a dedicated, "clean," low impedance ground connection just for the shield. Otherwise the shield is not providing a good AC ground path for the substrate noise.

If the ground shield is tied to the local circuit ground, then it is probably not much more effective than using wide guard rings around the whole circuit to try and shunt off substrate noise.
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Re: pattern ground shielding
Reply #11 - Apr 18th, 2009, 12:39am
 
RFICDUDE wrote on Apr 17th, 2009, 11:37am:
I believe they mean that if you really need the PGS to improve inductor to substrate isolation, then you need a dedicated, "clean," low impedance ground connection just for the shield. Otherwise the shield is not providing a good AC ground path for the substrate noise.
I agree to your opinions if I use PGS as isolation of substrate noise.

But if I want to get high Quality factor of inductor, I think that Ground of PGS should be opened, that is, Patterned Floating Shield should be used.

How do you think ?
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« Last Edit: Apr 18th, 2009, 2:05am by pancho_hideboo »  
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rfmems
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Re: pattern gound shielding
Reply #12 - Apr 24th, 2009, 6:35am
 
Hi pancho_hideboo,

Your floating PGS is a good point . In this case I guess the parasitic cap from inductor to floating shield in series with the cap between shield to substrate, am I right? With this method, I suppose you can reduce the Cp from ind to ground, but to which extent?

Also, I think whether to using PGS depends on the working frequency as well. Since small eddy current still exists and will reduce the inductance and Q at high frequency. Acoording to my simulation, 1-2GHz is fine, but higher you see the internal inductance start to fall below the same geomtry without PGS.

So maybe your inductor works in the range of 1-2GHz or its proximity. Let me know if I was wrong.



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« Last Edit: Apr 24th, 2009, 8:51am by rfmems »  
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pancho_hideboo
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Re: pattern ground shielding
Reply #13 - Apr 24th, 2009, 8:39pm
 
chenyan, thanks for comments.

rfmems wrote on Apr 24th, 2009, 6:35am:
Your floating PGS is a good point.
In this case I guess the parasitic cap from inductor to floating shield in series with the cap between shield to substrate, am I right?
Right.

rfmems wrote on Apr 24th, 2009, 6:35am:
With this method, I suppose you can reduce the Cp from ind to ground, but to which extent?
If top two metals are enough far from substrate, there is almost no reduction of Cp even if I use floating PGS.
But they are not so far from substrate in my cheap process.

rfmems wrote on Apr 24th, 2009, 6:35am:
Acoording to my simulation, 1-2GHz is fine,
but higher you see the internal inductance start to fall below the same geomtry without PGS.
What do you mean by "the internal inductance" ?
http://www.designers-guide.org/Forum/YaBB.pl?num=1205240723/1#1

rfmems wrote on Apr 24th, 2009, 6:35am:
So maybe your inductor works in the range of 1-2GHz or its proximity. Let me know if I was wrong.
Operation frequency of my application is 2.4GHz.
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« Last Edit: Apr 25th, 2009, 6:13am by pancho_hideboo »  

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rfmems
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Re: pattern gound shielding
Reply #14 - Apr 25th, 2009, 3:46am
 
Hi pancho_hideboo,

By internal indutance I mean the inductance excluded the factor of 1/(1-w^2LC), the self resonance factor.

I guess it is the same concept in that thread you added.
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