Hi guys
I met some problems in the simulation process by spectre,schematic as follow(from a paper):
My problem is that the LNR is so bad!The output voltage changed about 10mv when supply voltage changed from 0.8v to 2V at room temperature which is changed only 6mv from 0.9v to 4V in the paper(experimental results).now I show you my detail transistor parameter as follows,
M1:id=26.7nA W/L=10um/10um vth=497mv
M2:id=100nA W/L=1.145um/10um vth=336mv
M3:id=26.7nA W/L=2.85um/10um vth=487mv
M4:id=100nA W/L=220nm/10um vth=245mv
M5:id=26.7nA W/L=1um/10um vth=-318mv
M6:id=26.7nA W/L=1um/10um vth=-318mv
M7:id=100nA W/L=17um/10um vth=-345mv
M8:id=100nA W/L=17um/10um vth=-345mv
M9:id=100nA W/L=17um/10um vth=-345mv
M10:id=100nA W/L=4um/10um vth=321mv
Vgs1,2=400mV Vgs3,4=450mV Vgs5,6=-400mV Vgs7,8,9=-350mV Vgs10=438mV(Vthn=340mv Vthp=-320mv)
,every transitor operates in the Saturation region(M1 M3 is operates in the subthreshold region).Would you please help me to check if there are any improper parameters?
Moreover,the transient response of my circuit is too slowly that the VREF need 1.5ms to settling.I can not understand this phenonmenon.Is my current is too small?
Thanks