Mayank
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Hi kibby, As Berti suggested, Why don't you use Gm/Id methodology for ckt design rather than hand calculations (taking into acc only 1st order effects ) ??
Gm/Id methodology employs technology plots which you can simulate from spectre/spice on only 1 MOSFET....say you can store FOMs for different vgs,vds,vbs,lengths etc...Now you while building a ckt, you can directly use these curves which include all the secondary effects. It's pretty simple too.
From personal experience, i feel using Gm/Id is the best methodology & gives pretty accurate results when used wisely....
regards, Mayank.
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