Berti
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Hi Ruri,
I am not the expert for this kind of question ...
... but since the penetration depth of the high dose implant process for wells is much deeper compared to the medium dose implant process for the diffusions and contact regions, I think that proximity effects of substrate contacts are much less severe than WPEs.
For more details on sub-65nm CMOS, I recommend the book series from Wong: "Nano-CMOS circuit and physical design" etc.
Cheers
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