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6 X supply voltage seen on RF FET drain (Read 118 times)
daveC
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6 X supply voltage seen on RF FET drain
Mar 01st, 2011, 11:56am
 
Hi I was wondering if someone can help me with an issue I don't understand.  On the output drain of an RF FET transmitting at a VHF frequency under exceptional circumstances, i.e. an open circuit I have measured with an oscilloscope 6 X the FET supply voltage pk-pk, it does not die down and is a steady RF oscillation.  I understand that poor mismatches can cause a standing reflected wave which can cause higher voltages but I don't understand how it is possible to achieve 6X the FET's supply voltage.  Any ideas, thanks in advance
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loose-electron
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Re: 6 X supply voltage seen on RF FET drain
Reply #1 - Mar 2nd, 2011, 4:06pm
 
Reactive ringing of an inductance is probably whats happening.

Now, if there is an inductance that is getting given driven, that can be a steady state signal.
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Re: 6 X supply voltage seen on RF FET drain
Reply #2 - Mar 3rd, 2011, 12:39pm
 
If the Fet is oscillating  usually it  will start to draw more current then normal operation this is one factor you should be aware of since depending on the Q of the load the bias current can run up.  Also note that the circulating current in a resonant load (typically called a tank circuit) fed by a transistor in oscillation can be significantly larger than the transistor bias current, especially if the Q is high.   It is this circulating current multiplied with the equivalent parallel Resistance that sets the voltage.   So the higher the Q the higher the voltage due to higher current and higher parallel equivalent resistance.  

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