Dear all,

I am doing EMC/EMI simulations on different analog and MS circuits using eldo-RF steady-state analysis. In particular, I am interested in the DC shift that occurs at a particular node or current when an EMI is injected.
The integrated SST non-linear contributors analysis seems to identify the right devices but I am wondering how it does the ranking, and how it distinguishes between the components that "enhance" and those that "counteract" (the eldo RF documentation does not specify it explicitly).
Does anyone has information on the criterion or the algorithm used by the analysis ? I want to be sure about my interpretation of the results.

Regards.