watson822 wrote on Oct 26th, 2011, 3:56am:I have this question before. In my opinion, under fixed Vcc and required output power, you can get bias current Ic from load-line principle. Then, choose transistor size based on the current density of metal trace.
would you give some suggestions for the load-line simulation?
how to set the simulation load R? R equals Rload? or the optimum Ropt?
Thank you!