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DRAM DESIGN (Read 23346 times)
chandu28
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vellore
Re: DRAM DESIGN
Reply #15 - Dec 06th, 2011, 10:46pm
 
I found out the error sir ... its the decoder which I have used... its giving 2v output when I give 11 as input and nearly 1 for other 3 inputs.... can you suggest me some which can give equal outputs???  :) Smiley Smiley

and also the swing is too low please see the pictures
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chandu28
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Re: DRAM DESIGN
Reply #16 - Dec 6th, 2011, 10:46pm
 
this is another example... can you please suggest some methods????
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loose-electron
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Re: DRAM DESIGN
Reply #17 - Dec 7th, 2011, 9:42am
 
Is the fault in the circuit, or due to the load on the circuiit. (see prior suggestion on buffers to isolate)

start there.
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chandu28
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Re: DRAM DESIGN
Reply #18 - Dec 9th, 2011, 3:26am
 
sir I have used a 2 inverter connected back to back kind of sense amplifier which is somehow acting as an inverter.... any suggestions????
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Re: DRAM DESIGN
Reply #19 - Dec 9th, 2011, 5:50pm
 
The output of the inverter is probably attenuating the signal, the two devices ar both trying to pull the node in different directions. The result is attenuation or voltage division depending on the size of the transistor involved.
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chandu28
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Re: DRAM DESIGN
Reply #20 - Dec 9th, 2011, 8:49pm
 
so how can I reduce it sir??? its effect is more than loading effect.... do I have to vary the transistor sizes???
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Re: DRAM DESIGN
Reply #21 - Dec 10th, 2011, 10:15am
 
Which device do you want to provide the most signal?

That one should use bigger W/L transistors.

Usually 2 inverter latch structures have small W/L devices so another device with bigger W/L transistors can flip the latch back and forth.
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chandu28
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Re: DRAM DESIGN
Reply #22 - Dec 10th, 2011, 8:39pm
 
sir I am generally considering PMOS as a base...

I think since I am not using the output of the bitline bar only one side of the latch is being used and hence it is acting as an inverter... am I correct sir???
If so how can I proceed further sir???
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Re: DRAM DESIGN
Reply #23 - Dec 12th, 2011, 12:19pm
 
Back to back inverters will act like an SR latch, if you
drive the device properly.

It is a memory device with the driver removed.

When one side or the other is forced high-low the inverters function as inverters.

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chandu28
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Re: DRAM DESIGN
Reply #24 - Dec 27th, 2011, 5:31am
 
yes sir it does..
I have another doubt sir .... now how can I convert it to sdram....we know we can do this by adding clock to the system... my question is how exactly.... can you please through some light on it.
awaiting your reply..
sincerely,
M.S.Chandra Sekhar Smiley
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loose-electron
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Re: DRAM DESIGN
Reply #25 - Dec 27th, 2011, 1:09pm
 
You really need to do some research and reading on this subject.

http://technav.ieee.org/tag/8571/sdram
http://en.wikipedia.org/wiki/Static_random-access_memory
http://ieeexplore.ieee.org/Xplore/login.jsp?url=/iel5/4/4317684/04317699.pdf?arn...

Start there. Also search for vendors who
make SDRAM chips and read their documentation.

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chandu28
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Re: DRAM DESIGN
Reply #26 - Jan 6th, 2012, 1:13am
 
thank you sir....

sir,can I redraw sense amplifier as shown in the picture.....theoretically it should work well but practically it isn't can you through some light here.

sincerely,
M.S.Chandra Sekhar
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loose-electron
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Re: DRAM DESIGN
Reply #27 - Jan 6th, 2012, 1:41pm
 
The sense amplifier that you have may not have the needed gain, it is a single logic inverter.

More gain, and a way of matching the center null point
(average of Vmax, Vmin) of the holding cell to gin amplifier are needed.

Maybe 3 inverters in series would be sufficient, perhaps a comparator
amplifier structure could be considered.
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Re: DRAM DESIGN
Reply #28 - Jan 6th, 2012, 2:12pm
 
hello loose-electron,
i guess you need gain otherwise it takes more time regenerate.

Thanks,
Raj.
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loose-electron
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Re: DRAM DESIGN
Reply #29 - Jan 8th, 2012, 1:30pm
 
raja.cedt wrote on Jan 6th, 2012, 2:12pm:
hello loose-electron,
i guess you need gain otherwise it takes more time regenerate.

Thanks,
Raj.


Not sure what the OP is looking for here.
Help when you can right?
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