VINAY RAO
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Thanks for your quick reply Raj. Here I attached the response: 1st row- ID through MOS, 2nd row- VDS, 3rd row: Gm.
Purpose: I wanted to record the response of Gm w.r.t. Vgs when Id is constant. In simulation, I found 2 ways. First- keep constant current by varying W/L, second option to have constant current is to force ID by some ideal current source. Now I find second option is illogical to opt. But anyhow, how can I change W/L simultaneously with varying Vgs in simulation to record Gm vs Vgs in all 3 regions (WI, MI & SI)?
VDS: Here its coming around 6 volts. Though it's bit illogical-one question is striking me. Is that ideal current source which is charging Cdb and Cgd cap and increasing VDS to 6v?
Gm: Its true that in this case those equations becomes invalid. But if we observe in WI, we got large VDS value and still Gm is increasing w r t Vgs. How can I interpret this phenomenon?
Regards, Vinay Rao
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