Steve Mikes
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Posts: 2
Massachusetts, USA
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I am attempting to use a mosfet as an RF varactor in an SOI process. The process I'm using has a few different modelling options for the standard nfet device. There are BSIM and PSP models, and for BSIM the rgatemod switch can be either 1 or 3, but is set to 0 for extracted simulation. I'm concerned mostly about Q and capacitance range at the moment, and am observing the following: Q@1GHz | Range | Model | 8369 | 5.36 | BSIM, rgatemod=1, schematic | 36 | 5.36 | BSIM, rgatemod=3, schematic | 1025 | 4.39 | BSIM, Calibre RC extracted | 11900 | 5.79 | PSP, schematic | 1081 | 4.59 | PSP, Calibre RC extracted |
The post-extracted PSP and BSIM are not too far off, but I'm worried about the BSIM with rgatemod=3. This includes a bias-dependent intrinsic gate resistance which I'm not sure is being modeled in any of the other setups. Does anybody know if that is true or not? If so, is there any way to extract it with Calibre? Any help or comments is very much appreciated, thank you.
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