Hi,

lvt device is known for building high speed digital circuits, as the gate cap of the mos(switch) needs to charge to a smaller voltage for switching the state of the device(on/off).

but how can we show the same nature in terms of bandwidth (in terms of gm/cgs) another way to say that its a faster device.

I assume to a first order that when both low-vt and standard-vt  device have nature (similar overdrive for a given current and just that vth is controlled with doping) - may be wrong?
OR some other proces parameter is controlled to make it faster?


Thanks,
yvkrishna

Thanks BOE.