yvkrishna
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Hi,
lvt device is known for building high speed digital circuits, as the gate cap of the mos(switch) needs to charge to a smaller voltage for switching the state of the device(on/off).
but how can we show the same nature in terms of bandwidth (in terms of gm/cgs) another way to say that its a faster device.
I assume to a first order that when both low-vt and standard-vt device have nature (similar overdrive for a given current and just that vth is controlled with doping) - may be wrong? OR some other proces parameter is controlled to make it faster?
Thanks, yvkrishna
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