Hi,

The MOS model files provided by foundries often do not include the Non-Quasi-Static effect, and therefore do not yield correct results for charge injection effects. In the literature, some authors divide a MOS into many MOS's with smaller lengths to account for the NQS effect. Parameters for short channel effect (and still many others) have to be modified. With a HSPICE BSIM3 model file, would you please kindly teach me how to modify it ?

Thanks,  :)