Hello,
Have you seen the paper by  A. J. Scholten in IEEE transaction on Electron Devices, Vol. 50, No. 3 and call "Noise Modeling for RF CMOS circuit Simulation" this paper is a referent in the topic of noise modeling  in RF CMOS transistor the experimental result are precisely done in a 0.18um technology.
Bye

[quote author=hossein_ml  link=1117039467/0#0 date=1117039467]I am also looking for delta parameter in gate-induced noise for 0.18um process. I know that it is 2-3 times higher than 4/3 which is used for long channel devices, however, I thought that someone her may have actually had expericen with 0.18um process and can give me more accurate number. [/quote]

Juan has a good suggestion to read up on Scholten's papers; there are several more you can find on the IEEE web site.

As for "delta" -- I've seen "gamma" which is a factor that adjusts the channel noise in BSIM3.  spectre -help bsim3v3 in the latest version says gamma=2/3 by default.  (2/3 * 4kT gd0 = 8/3 kT gd0)  Some of the papers cited by Scholten talk about increasing gamma for short-channel devices; Scholten tends to think they are wrong.

As for induced gate noise, you'd probably need a different MOS model, like Philips' MOS11 (possibly BSIM4, I'm not sure about the accuracy of their formulation).  Remember, even if you calculated the value of the noise, you'd then have to figure out the transfer function from the gate of your device to the output.

The folks at Philips also mention that the best way to get induced gate noise is with a segmented channel approach: split the channel along the length, and the oxide capacitance of one segment is in series with the channel resistance (with noise) of another segment, and you get noise coupled to the gate.  But you probably have to extract new mos models (eg, short-channel effects shouldn't come into play for a segment of a long-channel device).