Dear Sirs,

I am using a device model (subckt)  which is including a MOS transistor, in my simulations I have to reach a voltages of about 30V on the gate source of the transistors, I receive a warning from Spectre telling that Vgs has exceeded the breakdown voltage of Vbox=30V.

only warning, no errors and at the end I get results for the simulation.

Are these simulation results true or not?

At the same time what is the effect of reaching these voltages on both DC and transient behav. of the transistor?

Is there any other technologies which can hold these 30V other than the High voltage models ?, it doesn't matter the process at the moment, bcz I am just simulating.

Thanks in advance.

aamar