Geoffrey_Coram
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The advanced bipolar transistors (mextram, hicum, vbic) support self-heating, by which the power dissipated in the device makes it warmer, which changes parameters such as the saturation current.
I think some high voltage MOS models in commercial simulators also support self-heating. And some implementations of BSIM3 have added it, as well.
But the point is, the model equations are already set up to change the parameters during the simulation, not just a dc temp or parameter sweep, but also a transient analysis.
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