steven
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Hello,
Given a MOS device at saturation, how to estimate the small signal output resistance rout? For example, if Id doubles, rout will decrease anti-proportionally (almost) according to approximation rout=Va/Id, with Va is related to geometry parameters and Vds. However, if taking a MOS device model for a simulation, the Gds hardly changes if Id changes. So it seems rout is not simply the relation was just outlined. Note that the simulation ensures the device is under saturation.
Thanks.
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