[quote author=Geoffrey_Coram link=1140230903/0#4 date=1140531974]
pbs681 wrote on Feb 21st, 2006, 4:28am:Paul wrote on Feb 20th, 2006, 12:19pm: But what I mean here is that, from more than hundred parameters in MOS model, which one is carrying physical meaning... ie tox, cj.... we know that these parameters (MOS model) are mixing of empirical and physical parameters
pbs681 -
I don't think your question is well posed. For example is CJ really physical? One could argue that it is a fitting parameter for the capacitance per area of the source/drain diffusion; the junction itself is probably not abrupt nor linearly graded. I think there's a continuum of sorts from the "truly physical" parameters like TOX to the "strictly empirical" parameters like VOFFCV. And many parameters probably have default values that are computed from physical values, but you can tweak them to fit the measurements better. (Eg, CGBO has a default value of 2*DWC*COX, which is physical, but what if you change it to 1.8*DWC*COX?)
Probably your best bet would be to find an extraction guide for BSIM3, which would tell you what parameters you could fill in "good values" for from physical process information.
-Geoffrey
Hi Geoffrey,
I totally agree with you. My question was not well posed since I am still new in this field. That is what I mean. Sorry for that. Anyway I have question regarding Cj. In order to extract the Cj, we draw special test structure that include the Cj requirement extraction, ie area intensive and prephery intensive test structure. That means, Cj is directly extracted from the structure and not from the calculation. That is why I am reffering this parameter as a physical parameter. Is it correct?
Where can I find an extraction guide for BSIM3. Really appreciate if anybody can help on this.