extractor_man
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Can someone help me to draw a picture of the advantages and weakness of most common MOSFET models for technologies < 0.25, 0.18 um in RF applications? Specilal attention to: BSIM3V3, EKV2.6 and EKV3, and PSP.
In order to choose one model vs others I would like to know:
1- Maturity of the models: (still bugs to be fixed?)
2- Model implementation in EDA simulation tools like Spectre, Eldo, ADS and HSPICE (C code, VerilogA ADMS, Simkit), supported? what about the speed for each model and simulators?
3- Symetry modeling
4- parameter extraction procedure (easy or not): It seems that EKV models have less and uncorrelated parameters than any others. Is it really easier to extract parameters?
5- Accuracy, convergence issue reported?
6- Accurate modeling of IIP3 at VDS=0 and at higher voltages. Also important is to be able to simulate accurately the higher order derivatives of the DC and RF I-V curves.
7- And ofcourse your own experiences and any comments on these models will be highly appreciated.
Many thanks for your support,
Regards,
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