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latch up failure (Read 3214 times)

jason_class Community Member Offline Posts: 39 singapore	latch up failure Oct 05^th, 2006, 9:28am Dear All Anyone can help to give some idea what could have cause latch up failure ? It is often mentioned the resistance of well are higher than normal. Am I right? Other than well resistance, what is the other possible factor that contribute to latch up on mos devices? Kindly enlighten Thank you best rgds Jason
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loose-electron Senior Fellow Offline Best Design Tool = Capable Designers Posts: 1638 San Diego California	Re: latch up failure Reply #1 - Oct 17^th, 2006, 1:58pm current thru the bulk, leads to an IR drop across the bulk, get that voltage drop above the Vbe voltage and you turn a parasitic transistor on. Only got 2 variables to work with here I and R... There's a lot of stuff out there on this. Google it.
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jason_class Community Member Offline Posts: 39 singapore	Re: latch up failure Reply #2 - Oct 20^th, 2006, 11:54pm Dear Loose e- Thank you for the comment. I saw the other posting where you introduce a link to fairchild document. It is interesting to read..I have some doubts with the document. I shall write back later. Jason
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