Geoffrey_Coram
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Hi, Peter - BSIM3 has been used down even to 90nm CMOS, I believe. Of course, depending on your application, you may find problems even in larger geometries; my company (Analog Devices) needed to enhance the model for high-precision circuits in 180nm (0.18u).
The code has a parameter TYPE that you can set to -1 to simulate PMOS. And yes, you have to set (extract) a bunch of parameters for the model to match data for a given technology.
A fair number of the parameters are used for the diodes (body-drain, body-source), current and capacitance. Oh, yes, and there's a lot of the code used for the CAPMOD channel charge/capacitance. I see a comment in the copy I have // C-V model (capacitance as a function of voltage), and you can delete that section (all the way down to and including the four lines after // Add depletion capacitance) if you just want Ids. There aren't that many parameters used only in the C-V model, though, so you won't save much in that regard.
-Geoffrey
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