I have designed an audio class-d power amplifier (analog input) recently,
By spice simulation,if i connect the power NMOS substrate to it own pad
rather than to the source of the NMOS,
the thd vlaue become better (because pad parasited inductance)
but i worry about the ESD ferformance,
If some body can give me an advance??


darren Wu
lg.xyz@msa.hinet.net