RDCam
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Posts: 2
Cambridge, UK
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I noticed the trend of Vt (threshold voltage) Vs. Length (um) for the low-vt nchannel MOS transistors in recent sub-micron technologies has changed. Previously the Vt for shorter channel lengths would be lower, but now it seems significantly higher cmopared to longer channel(>2u). The gradient of the Vt Vs L curve for L <~1.5u is very high. Are there any process experts who can explain this ? Will greatly appreciate any clarification on something that has been bugging me for a few months already!
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