Hi all,

just wondering, I'm using a n-well process, so does that mean my pmos will have better immunity to substrate noise than nmos? Basically, there's a diode between the nwell and the psubstrate and so the psubstrate would have to be above VDD to leak...

thanks,
Aaron

Hi Vivek,

thanks for the reply. In the process i'm using, the nmos have no wells. They are directly in the p-substrate. So i was thinking that they would suffer more substrate noise than the pmos in the nwells.

cheers,
Aaron