Hi All,

I am not sure if this is the right forum to post this. But nonetheless curious to know about following.

Lets assume that by process manipulation one has got a strained silicon device:-
(1) What could be the possible effect on devices deep-depletion breakdown? If it gets lower then why and vice-versa?
(2) This would be process dependent, but in general would one expect parasitics capacitance to increase?

Thanks in Advance,