aaron_do
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Hi all,
I intend to do a little characterization of some of the transistors in my PDK and i'm wondering how i should setup the experiment. Basically I want to fabricate a few devices and measure fT, gm/IDS, early voltage...so i figure i should simply use to the transistor with one GSG pad connected to the gate, and one GSG pad connected to the drain. The source will be connected to one of the G pads. I this setup ok? Also any recommendations?
thanks, Aaron
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