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aaron_do

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wafer probe transistor characterization
Oct 07^th, 2008, 9:01pm

Hi all,

I intend to do a little characterization of some of the transistors in my PDK and i'm wondering how i should setup the experiment. Basically I want to fabricate a few devices and measure fT, gm/IDS, early voltage...so i figure i should simply use to the transistor with one GSG pad connected to the gate, and one GSG pad connected to the drain. The source will be connected to one of the G pads. I this setup ok? Also any recommendations?

thanks,
Aaron

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didac

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manresa,spain

Re: wafer probe transistor characterization
Reply #1 - Oct 8^th, 2008, 2:41am

Hi,
I'm not a process expert but recently I had the same discussion about device characterization with a professor, the question rise if you want just a few measurements or try to obtain a full model. He recommended the use of IC-CAP and warned me against to make the try just for trying since it's a complex field(there are companies that do this job for some foundries). If you wanna make just DC characterization it's "easy" but if you go to high frequency characterization the parasitics of the fixture must be deembeded so it's not just two GSG probes connected to the transistor. The basic measurements are DC,CV,S-Parameters(RF) and Noise, it depends on how complete characterization you need the complexity grows.
A reference I have at hand:http://www.admos.de/uploads/media/MWEE-P2028.pdf, also I remember that Agilent has it's knowledge center for IC-CAP.
Hope it helps,

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aaron_do Senior Fellow Offline Posts: 1398	Re: wafer probe transistor characterization Reply #2 - Oct 8^th, 2008, 9:04pm Hi didac, thanks once again for your help. I have IC-CAP available to me so i guess i'll ask around about how to go about this. regards, Aaron
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didac Senior Member Offline There's a million ways to see the things in life Posts: 247 manresa,spain	Re: wafer probe transistor characterization Reply #3 - Oct 9^th, 2008, 1:13am Hi, glad it helped a little bit, if you have IC-CAP the good news is that you will be able to control the measurements with it and generate a compact model from the measurements(BSIM,EKV,PSP...) ready(or almost) to use in the simulator.
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