Hi
    Tsmc cmos65nm or 90nm provide three types of mos transistors: 1.2V, 1.8V and 3.3V.  I am not deciede which type transistor should be used for RF and analog circuit of wifi.  For 1.2V, the power consumption is the lowest and the design is the most difficult. For 3.3V, power consumption is the largest and design may be easiest.
    Many large companies such as marvel,atheros, broadcom, realtek, and csr have provide wifi chip  with 65nm or 90nm cmos process.  I want to know which type transistors(1.2V, 18V or 3.3V) are adopted for RF and analog circuit?
    Could you please give me your opinion or experience about supply voltage for RF and analog circuit for wifi under 65nm or 90nm cmos process?
  Thanks

easyads wrote on Sep 29^th, 2009, 11:23pm:


hi,
I don't know have think about the flicker noise about the MOSFET. in my opinion, the 1.8v 3.3v mos in 65nm/90nm process, the thickness of gate oxide will be much higher. and so the flicker noise. in the rf analog design it is bad. so i don't think you can get good performance by large vdd.
cczhang