Hi, I just started to use 65nm tech to design SC circuits. I found that the typical  1.2V MOSFET has much higher noise than thick oxide MOSFET(1.8/2.5V), typically about 5X for the integrated Noise of a SC gain stage.  The major contributor in noise summary is the noise of gate leakage current. I was not familiar with this noise source before, and I found little reference matirials. Anyone can help me with this problem or give some reference? Thanks a lot!