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Model for HJFET NE3514S02 transistor!! (Read 4121 times)
pancho_hideboo
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Re: Model for HJFET NE3514S02 transistor!!
Reply #15 - Jun 22nd, 2010, 2:34am
 
RF_Designer wrote on Jun 22nd, 2010, 2:01am:
1. Do you have a good documentation on BER ?
2. For RF receiver, do you agree that it is important to have a BER parameter?
   how can we get it ?
   is it possible to get from simulation?
Your questions are out of topic of this thread.

Create another new thread for your new questions with detailed decription and correct sentences using correct terminologies but without unfamiliar abbreviations such as "sof" and "pb".


RF_Designer wrote on Jun 22nd, 2010, 2:01am:
For the transistor part, is it important to have the layout of the transistor NE3514S02
or just S2P file is sufficient in order to use a co-simulation ?
What on earth do you mean by "layout" and "co-simulation" ?

Again surely read followings.
http://www.designers-guide.org/Forum/YaBB.pl?num=1273408947/1#1
http://www.designers-guide.org/Forum/YaBB.pl?num=1273408947/4#4

Answer following questions.

pancho_hideboo wrote on May 9th, 2010, 6:02am:
What conditions do you apply for simulation ?
Do you include package model and PCB model in simulation ?
Do you correctly do de-embedding in measurement ?
Do you correctly do calibration of reference plane in measurement ?

pancho_hideboo wrote on Jun 12th, 2010, 6:45am:
RF_Designer wrote on Jun 10th, 2010, 9:43am:
Not that, the simulations are done as following:
1. from layout i create the component
What do you want to mean ?
Do you mean that you use standard distributed component of ADS as layout blocks ?
Or do you mean that you invoke EM-Cosimulation of Momentum and SP-analysis in Agilent ADS ?

pancho_hideboo wrote on Jun 12th, 2010, 6:45am:
RF_Designer wrote on Jun 10th, 2010, 9:43am:
I hope that i clarified my problem.....
Your problem is very easy problem.
I think your problem is simply you can't reflect actual measurement conditions in simulation.
Show me reference plane location for actual measurement and simulation.
If you use SMA connector in actual measurement, how to treat it in simulation ?
Or do you use "Port Extension" in actual measurement ?


Your problem is simply you can't reflect actual measurement conditions in simulation.

I think both S-parameter model and Nonlinear model of NE3514S02 are for on-wafer DUT not for packaged device data.
And this HJFET can be provided as bare-chip.

Which do you use, bare-chip or packaged-device ?

If you use bare-chip, how do you mount this device on printed circuit board ?
(1) Normal mount with wire bonding.
(2) Flip mount with bumps

Artwork patterns of PCB(Printed Circuit Board) are very important in high frequency.
If you use packaged device, you have to include package model and foot print in simulation in addition to
Artwork patterns of PCB.

Even if you use bare-chip as normal mount with wire bonding, you have to include wire model in simulation.
http://www.designers-guide.org/Forum/YaBB.pl?num=1206929207/3#3

Such things are very very very very common in RF engineering.

It seems you are very beginner in RF engineering world.



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