vivkr
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If I had to take a guess, I would say that the higher 1/f noise in poly resistors is expected due to 2 reasons:
1. Poly is semi-crystalline (polycrystalline if you will) and hence the likelihood of greater number of places for electrons to get trapped, although.
2. An Nwell resistor likely has much more current flowing away from the silicon surface and hence fewer traps.
That being said, I would imagine that the trends ought to be very strongly process dependent. Any process guys out there?
Vivek
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