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Device Noise Parameter Description (Read 2289 times)

Upemba

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Device Noise Parameter Description
Dec 08^th, 2010, 9:06am

I run a pnoise SpectreRF simulation and I am not able to identify each noise contribution parameter reported. For instance: id stands for channel thermal noise, fn for flicker noise of MOS transistors. I am having additional parameters that I am not able to identify. Can someone help me to describe each noise paramter. Below is the list:
1. MOS transistors: what is rs and rd?
2. BJT transistors: what is ic, ib, rb
3. Resistors: what is rs? I thought rn was thermal noise of resistors.

Thank in advance for your answers

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sheldon

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Re: Device Noise Parameter Description
Reply #1 - Dec 9^th, 2010, 6:45pm

Upemba,

Here are my guesses:

1) Thermal noise of the source and drain resistance: rs, rd
2) base and collector current shot noise: ib, ic
Thermal noise of the base resistance: rb
Note: there are additional terms for rc and re but their effect is
usually small
3) Noise for the source resistance, the noise of the port

Best Regards,

Sheldon

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Upemba Junior Member Offline Posts: 10	Re: Device Noise Parameter Description Reply #2 - Dec 10^th, 2010, 3:38pm Thank you
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