pcardoso73
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Posts: 25
Portugal
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Hi all,
Please try to help me out on this. I am simulating a VCO using 130 nm technology. As BJT's have a lower flicker, I tried the simulation on weak inversion for the MOS, expecting a better behavior than in the strong inversion, in terms of 1/f and 1/f^3. But, by simulations, I cannot reach this conclusion. Any ideas ?
Best regards, Pedro
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