The Designer's Guide Community
Forum
Welcome, Guest. Please Login or Register. Please follow the Forum guidelines.
Jul 30th, 2024, 11:30pm
Pages: 1
Send Topic Print
analog design 28nm and below - poll (Read 2824 times)
love_analog
Senior Member
****
Offline



Posts: 101

analog design 28nm and below - poll
Feb 18th, 2012, 5:45pm
 
I am curious how people are finding their transistor parameters for analog design 28nm and below

Do you still use gm=2*I/(Vgs-Vt). and I=K*W/L*(Vgs-Vt)^2.

Working with recent college grads - they just put the structure together and parameterize all the transistors and run optimization routines.

This for an opamp with gain, BW specs.
Back to top
 
 

loveanalog.blogspot.com
The Power of Analog
View Profile   IP Logged
raja.cedt
Senior Fellow
******
Offline



Posts: 1516
Germany
Re: analog design 28nm and below - poll
Reply #1 - Feb 19th, 2012, 1:49am
 
hello,
this equations even don't work at 180nm as well...better trust the simulator for finding parameters called gm,gds... and use this parameters to find opamp gain and BW...
Back to top
 
 
View Profile WWW raja.sekhar86   IP Logged
loose-electron
Senior Fellow
******
Offline

Best Design Tool =
Capable Designers

Posts: 1638
San Diego California
Re: analog design 28nm and below - poll
Reply #2 - Feb 21st, 2012, 4:28pm
 
For CMOS Academic equations have never worked properly.

Academic simplifications.

Run a set of bias curves, use those
for approximate bias locations
(geometry scaling to set Id aftger setting up Vds and Vgs)

After that use a simulator.
Back to top
 
 

Jerry Twomey
www.effectiveelectrons.com
Read My Electronic Design Column Here
Contract IC-PCB-System Design - Analog, Mixed Signal, RF & Medical
View Profile WWW   IP Logged
weber8722
Community Member
***
Offline



Posts: 95

Re: analog design 28nm and below - poll
Reply #3 - Apr 20th, 2012, 7:11am
 
love_analog wrote on Feb 18th, 2012, 5:45pm:
I am curious how people are finding their transistor parameters for analog design 28nm and below

Do you still use gm=2*I/(Vgs-Vt). and I=K*W/L*(Vgs-Vt)^2.

Working with recent college grads - they just put the structure together and parameterize all the transistors and run optimization routines.

This for an opamp with gain, BW specs.


Typically - and independant on process - I am doing normally this:

- If you know you need highest speed, use min L, and find W e.g. to achieve a certain Vdsat or drive-strength.

- If you know matching is important, then better use non-minimum-L and start with meaningful L, find suited W for good matching, Vdsat and noise. Best make some technology investigations on these parameters vs Id, L, W.

- Especially the for current source better use never min-L. Look mostly at Vdsat and matching.

- Of course also the Id needs to be selected, just to fit power budget, noise, drive strength, bandwidth, etc.

- The more experiences you have the closer usually the starting point on Id, L, W is to the optimum values. Number of fingers, etc. I set usually to make the transistor not looking too extreme, best not far away from quadratic. More care is needed for special applications like RF and power-amps.

Bye Stephan
Back to top
 
 
View Profile   IP Logged
Pages: 1
Send Topic Print
Copyright 2002-2024 Designer’s Guide Consulting, Inc. Designer’s Guide® is a registered trademark of Designer’s Guide Consulting, Inc. All rights reserved. Send comments or questions to editor@designers-guide.org. Consider submitting a paper or model.