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The Designer's Guide Community Forum › Modeling › Semiconductor Devices › MOS varactor with diffusion layer
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MOS varactor with diffusion layer (Read 2925 times)
newic
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MOS varactor with diffusion layer
Mar 29th, 2012, 7:02pm  
want to know more on the accumulation type MOS varactor. (with nwell)

is n+ diffussion layer required beneath the poly layer?
I saw some varactor structures come with & without diffusion layer under the poly.

what is the purpose to have diffusion under the poly?
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nxing
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Re: MOS varactor with diffusion layer
Reply #1 - Apr 5th, 2013, 8:56am  
under the poly, it's N-well, to form the accumulation varactor. Can you point to where people put n+ under gate? I personally never saw that.
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