jianke
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Hi everyone! I am reading a paper about a CMOS LNA design. But I am not sure where the parameters' values of the CMOS technology are from??? The process used in the paper is SMIC 0.18um RF CMOS processes. The values cited are: (1) Gate oxide capacitance per unit area, Cox=9mF/(m^2); (2) Body effect parameter, r=3; (3) One measure of the departure from the long-channel regime, a=0.5; (4) NMOS charge-carrier effective mobility, un= 3.4*10^(-2) (m^2)/(VS);
Maybe SMIC is not popular in your country, but for other RF CMOS technologies, such as TSMC or another one, how can I find those parameters values??? Thanks!
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