Lynn Lou
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Posts: 18
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Hi, your question about N/p-doping, N+/P+ -doping is actually a matter of process. Please keep in mind, the GR effect are based on the diode effect of a PN junction. And the heavy doping (N+/P+) is generally for improving the conductivity to the doped well. Both of P+ on psub and N+ on NW let go the current, but the question is : what contribute to it, Elec or Hole? The answer is P doping creates Holes while N doping Elecs. A Hole is actually a created unit, and it means there is no Elec at where a Hole stands. Now I believe you get your answers.
About Q.4, I think you can not directly place an N+ on psub or P+ on NW in standard process. As mention above, heavy doping is just for improving conductivity, and NW and PW are used as GRs.
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