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can mos gate connect to vdd or gnd directly? (Read 2998 times)
lhlbluesky_lhl
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can mos gate connect to vdd or gnd directly?
Mar 19th, 2013, 5:47am
 
can the NMOS gate be directly connected to VDD, or PMOS gate be directly connected to GND?
does it will have relibility issues? such as gate breakdown, etc.
usually, a series resistor will be used, what is the role of this series resistor?
thanks.
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lhlbluesky_lhl
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Re: can mos gate connect to vdd or gnd directly?
Reply #1 - Mar 19th, 2013, 6:59am
 
here is a symbolic picture, thanks.
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1_014.jpg
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raja.cedt
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Re: can mos gate connect to vdd or gnd directly?
Reply #2 - Mar 19th, 2013, 7:13am
 
Hello,
that  depends on the oxide breakdown voltage. But in general vdd is lesser than breakdown voltage. The purpose of the resister is to limit the current in case if they break due to ESD or in-case of fast spikes.

Thanks,
Raj.
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threepwood
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Re: can mos gate connect to vdd or gnd directly?
Reply #3 - Mar 23rd, 2013, 5:19am
 
For single oxyde devices in technologies below 90nm we (in our society) use to use -for more safety- a "tie-on" or "tie-down" logic cell (you'll probably find in your digital library).
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English is not my mother tongue, so please excuse my mistakes ^^
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