aaron_do
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Hi rfmagic,
thanks for the reply. For the reliability part, my understanding is that it's not correct to look at the rms voltage. The reason is the time-to-failure of the device reduces exponentially with the gate voltage. i.e. having a duty cycle of 50% simply means your device will last 2x longer than the same device with a DC bias of 2VDD (as opposed to the same time as a DC bias of √2VDD.. That said, I have seen papers where their experimental data shows that if your signal is an RF signal, the time-to-failure is much longer (memory effects maybe?). My switching speed is on the order of a couple of hundred MHz.
I agree with you about the Vt modulation. However, if you connect the body to the source/drain, I believe there is a possibility of the junction diode turning on when the switch is supposed to be OFF. I have found a solution for my particular implementation of the bootstrapped switch, but it isn't pretty. My main question is really how come there is no reliability issue. Maybe its because the professor's work is too academic?
Aaron
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