rf_man
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Posts: 28
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Hi Gurus,
A high shunt impedance is needed at low-frequency (~500MHz), 30nH inductance is approx. ok. However, this inductor is huge on silicon(SiGe Bicmos technology), its fres is about 2GHz. Wanna to use an inductor which has fres at ~500MHz, then the impedance at fres=500MHz is high enough. But I think the inductor with fres=500MHz is not possible to be made smaller than the original one: L=30nH, fres=2GHz. Because, fres=1/sqrt(LC), for lower fres, L needs to be large, maybe change to lower metal layers can help increase C, but fres will not be reduced too much. Am I right? or there are other methods to make a relatively small inductor but with very low fres?
Your help is highly appreciated.
An rf-design beginner.
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