vroy_92
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Leuven, Belgium
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Theoretically yes. But I will generally not do that. One because the gm will be high, the Vth mismatch impact will be higher. I might have to use source degeneration (aka stacking devices) which blows up area and last resort. Secondly, I am apprehensive of the MOS models in subthreshold region, so I will keep away from them.
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