Paul
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Vishwanath,
I am not sure to understand you correctly. It is not possible to use different manufacturing processes on a single wafer because there is very little need. As in 0.13um technology you can draw your device's channel length whatever you want, provided it is larger than 0.13um, I don't see the reason why you would like to have 0.18um technology devices...
The reason to provide "0.35um devices", which have thicker gate oxyde, is to have convenient voltage levels to communicate with the outer world. Applying the 3.3V I/O voltage to 0.13um devices would break down the gate oxyde very quickly.
Could you share the reasoning behind your question, please?
Paul
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