Hi Jason,

Just one paper to suggest but it has further links to more SOI stuff in the referencs.

Try "A gm/Id based methodology for ....." by Silveira et. al. in JSSC Sep. 1996.

The authors present a very brief but useful discussion about the merits of SOI for analog design such as higher intrinsic gain owing to no depletion capacitance below the gate and of course, no body terminal or body effect.

Additionally, SOI is supposed to have advantages with respect to reliability and radiation hardness. But you will probably find more on that elsewhere.

Vivek

Hi Jason,

I myself am not very familiar with SOI. But I know that IBM was one of the
first proponents of this technology along with AMD. As this is a relatively new feature, most of the standard textbooks on semiconductor devices dont have any information on this. However, you will probably find enough journals and artciles or even links to books on the web. One article I found was:

http://www.elecdesign.com/Articles/Index.cfm?ArticleID=3402&pg=1

As for partially depleted and fully depleted devices, I would say that the reason for doping the latter lightly would be to allow them to deplete more easily. The depletion region width is inversely proportional to the doping level. That would be a simple explanation for it.

And yes, I was referring to an IEEE JSSC article.

Hope that helps.

Vivek