Hi Jason,
I myself am not very familiar with SOI. But I know that IBM was one of the
first proponents of this technology along with AMD. As this is a relatively new feature, most of the standard textbooks on semiconductor devices dont have any information on this. However, you will probably find enough journals and artciles or even links to books on the web. One article I found was:
http://www.elecdesign.com/Articles/Index.cfm?ArticleID=3402&pg=1As for partially depleted and fully depleted devices, I would say that the reason for doping the latter lightly would be to allow them to deplete more easily. The depletion region width is inversely proportional to the doping level. That would be a simple explanation for it.
And yes, I was referring to an IEEE JSSC article.
Hope that helps.
Vivek