sheldon
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River,
Epitaxial layers are used because they are more lightly doped than the layers below them. Growing an epitiaxial layer is the only method to create a more lightly doped layer on top of a more highly doped layer. For bipolars, an n-epitaxial is used. This layer allows npn transistors to have an N+ buried subcollector. The buried subcollector suppresses the beta of the vertical pnp inherent in the npn structure. For CMOS transistors, a p+ wafer is used with a p-epitaxial layer to suprress the beta of the parasitic bipolar that causes latch-up.
Lower doped regions are preferred because the breakdown voltage is higher, the junction capacitances are lower, device output resistances are higher, device threshold voltages are higher, ... This is a fundamental challenge for our industry. Think about what happens as processes are scaled down from 0.35um --> 90nm. The doping concentration of the substrate increases meaning that the transistors have lower breakdown voltage, less output resistance, ...
The p+ substrates are doped near to degeneracy, that is, they are more like "conductors" then "semiconductors". You can not build devices in transistors in a p+ substrate.
Lateral pnp devices are built in n-epitaxial bipolar processes so the devices are isolated. In CMOS processes it is more typical to build vertical pnp transistors using n-well as a base. These device do not have an isolated collectors.
Best Regards,
Sheldon
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